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REPORTInterest in N‑type panels has grown steadily because the silicon substrate inherently carries several advantages over P‑type. N‑type wafers are less prone to common degradation mechanisms such as light‑induced degradation and boron‑oxygen defects. This stability becomes evident in long‑term field data, where N‑type cells maintain performance with less drift and fewer early‑life surprises. When factories adopt N‑type wafers, they also gain more flexibility in processing conditions, especially when working with thinner substrates. Thinner wafers help reduce material use and reduce the overall cost structure, but maintaining strength and preventing thermal stress requires careful line design.
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